InGaAsP/InP quantum wires fabricated by focused Ga ion beam implantation

H. Asahi, S. J. Yu, J. Takizawa, S. G. Kim, Y. Okuno, T. Kaneko, S. Emura, S. Gonda, H. Kubo, C. Hamaguchi, Y. Hirayama

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

InGaAsP/InP quantum-wire structures are fabricated by focused Ga ion beam implantation onto InGaAs/InP single quantum well (QW) structures. It is found that InGaAsP layers produced by the intermixing of InGaAs/InP QW's by Ga ion implantation and subsequent thermal annealing are nearly lattice matched to the InP substrate. Fabricated quantum-wire structures exhibit photoluminescence spectra showing a large blue shift, which is induced by the carrier confinement into wire structures and the change of well composition.

Original languageEnglish
Pages (from-to)232-235
Number of pages4
JournalSurface Science
Volume267
Issue number1-3
DOIs
Publication statusPublished - 1992
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'InGaAsP/InP quantum wires fabricated by focused Ga ion beam implantation'. Together they form a unique fingerprint.

Cite this