InGaAsP/InP MQW FP laser and silicon platform integration by direct bonding

Akio Higo, Ling Han Li, Eiji Higurashi, Masakazu Sugiyama, Yoshiaki Nakano

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)

    Abstract

    InGaAsP/InP active layer on silicon heterointegration by Ar/O2 plasma assisted direct bonding in air was reported. The efficient current injection from SOI micro rib to InGaAsP active layer has been achieved to realized a direct-current-pumped Fabry-Perot Laser by pulse operation at 43 mA threshold current.

    Original languageEnglish
    Title of host publication10th International Conference on Optical Internet, COIN 2012
    Pages24-25
    Number of pages2
    Publication statusPublished - 2012 Sep 28
    Event10th International Conference on Optical Internet, COIN 2012 - Yokohama, Kanagawa, Japan
    Duration: 2012 May 292012 May 31

    Publication series

    Name10th International Conference on Optical Internet, COIN 2012

    Other

    Other10th International Conference on Optical Internet, COIN 2012
    CountryJapan
    CityYokohama, Kanagawa
    Period12/5/2912/5/31

    ASJC Scopus subject areas

    • Computer Networks and Communications

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