InGaAsP/InP Distributed Feedback Buried Heterostructure Lasers with Both Facets Cleaved Structure

Haruo Nagai; Takashi Matsuoka; Yoshio Noguchi; Yoshio Suzuki; Yuzo Yoshikuni

doi:10.1109/JQE.1986.1072981

InGaAsP/InP Distributed Feedback Buried Heterostructure Lasers with Both Facets Cleaved Structure

Haruo Nagai, Takashi Matsuoka, Yoshio Noguchi, Yoshio Suzuki, Yuzo Yoshikuni

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

Feasibilities of lnGaAsP/InP distributed feedback buried heterostructure lasers in the 1.3 and 1.5 μm wavelength regions with two cleaved facets are shown. Theoretical and experimental examinations show that the kl values ranging between 1 and 2 are sufficient for high-performance operation with the stable single longitudinal mode in a temperature range wider than 100 degrees. Distribution of lasing characteristics is investigated for 140 randomly chosen LD's from two wafers. Approximately 65 percent of the devices are found to be operable in the single longitudinal mode. A CW single longitudinal mode operation power of 20 mW at 25°C for a 1.5 μm device, and that of 40 mW (60 mW with AR coating) at 25°C for a 1.3 μm device with low threshold current are achieved. These characteristics are attained by both first- and second-order grating devices fabricated by the PH₃ addition LPE technique. The results of the aging test at 70°C and 110 mA in the automatic current control condition are also presented.

Original language	English
Pages (from-to)	450-457
Number of pages	8
Journal	IEEE Journal of Quantum Electronics
Volume	22
Issue number	3
DOIs	https://doi.org/10.1109/JQE.1986.1072981
Publication status	Published - 1986
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JQE.1986.1072981

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title = "InGaAsP/InP Distributed Feedback Buried Heterostructure Lasers with Both Facets Cleaved Structure",

abstract = "Feasibilities of lnGaAsP/InP distributed feedback buried heterostructure lasers in the 1.3 and 1.5 μm wavelength regions with two cleaved facets are shown. Theoretical and experimental examinations show that the kl values ranging between 1 and 2 are sufficient for high-performance operation with the stable single longitudinal mode in a temperature range wider than 100 degrees. Distribution of lasing characteristics is investigated for 140 randomly chosen LD's from two wafers. Approximately 65 percent of the devices are found to be operable in the single longitudinal mode. A CW single longitudinal mode operation power of 20 mW at 25°C for a 1.5 μm device, and that of 40 mW (60 mW with AR coating) at 25°C for a 1.3 μm device with low threshold current are achieved. These characteristics are attained by both first- and second-order grating devices fabricated by the PH3 addition LPE technique. The results of the aging test at 70°C and 110 mA in the automatic current control condition are also presented.",

author = "Haruo Nagai and Takashi Matsuoka and Yoshio Noguchi and Yoshio Suzuki and Yuzo Yoshikuni",

year = "1986",

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T1 - InGaAsP/InP Distributed Feedback Buried Heterostructure Lasers with Both Facets Cleaved Structure

AU - Nagai, Haruo

AU - Matsuoka, Takashi

AU - Noguchi, Yoshio

AU - Suzuki, Yoshio

AU - Yoshikuni, Yuzo

PY - 1986

Y1 - 1986

N2 - Feasibilities of lnGaAsP/InP distributed feedback buried heterostructure lasers in the 1.3 and 1.5 μm wavelength regions with two cleaved facets are shown. Theoretical and experimental examinations show that the kl values ranging between 1 and 2 are sufficient for high-performance operation with the stable single longitudinal mode in a temperature range wider than 100 degrees. Distribution of lasing characteristics is investigated for 140 randomly chosen LD's from two wafers. Approximately 65 percent of the devices are found to be operable in the single longitudinal mode. A CW single longitudinal mode operation power of 20 mW at 25°C for a 1.5 μm device, and that of 40 mW (60 mW with AR coating) at 25°C for a 1.3 μm device with low threshold current are achieved. These characteristics are attained by both first- and second-order grating devices fabricated by the PH3 addition LPE technique. The results of the aging test at 70°C and 110 mA in the automatic current control condition are also presented.

AB - Feasibilities of lnGaAsP/InP distributed feedback buried heterostructure lasers in the 1.3 and 1.5 μm wavelength regions with two cleaved facets are shown. Theoretical and experimental examinations show that the kl values ranging between 1 and 2 are sufficient for high-performance operation with the stable single longitudinal mode in a temperature range wider than 100 degrees. Distribution of lasing characteristics is investigated for 140 randomly chosen LD's from two wafers. Approximately 65 percent of the devices are found to be operable in the single longitudinal mode. A CW single longitudinal mode operation power of 20 mW at 25°C for a 1.5 μm device, and that of 40 mW (60 mW with AR coating) at 25°C for a 1.3 μm device with low threshold current are achieved. These characteristics are attained by both first- and second-order grating devices fabricated by the PH3 addition LPE technique. The results of the aging test at 70°C and 110 mA in the automatic current control condition are also presented.

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InGaAsP/InP Distributed Feedback Buried Heterostructure Lasers with Both Facets Cleaved Structure

Abstract

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