InGaAsP optical device integration on SOI platform by Ar/O2 plasma assisted bonding

A. Higo, L. Li, E. Higurashi, M. Sugiyama, Y. Nakano

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    The hetero-integration of InGaAsP/InP on highly doped silicon micro wire structure for Si hybrid laser using the plasma assisted direct bonding has been carried out. For strong adhesion, bonding assisted pattern was used for the silicon wire to the InGaAsP/InP layers. The I-V characteristics of the highly doped silicon micro wire to InP/InGaAsP layers are measured and compared to the Si/InP bulk bonding. The improvement of the heterointegration with long time annealing was also discussed and realized the direct current injection from Si wire platforms to compound semiconductor active layer for silicon hybrid laser.

    Original languageEnglish
    Title of host publicationMOEMS and Miniaturized Systems XII
    DOIs
    Publication statusPublished - 2013 Jun 12
    EventMOEMS and Miniaturized Systems XII - San Francisco, CA, United States
    Duration: 2013 Feb 42013 Feb 6

    Publication series

    NameProceedings of SPIE - The International Society for Optical Engineering
    Volume8616
    ISSN (Print)0277-786X

    Other

    OtherMOEMS and Miniaturized Systems XII
    CountryUnited States
    CitySan Francisco, CA
    Period13/2/413/2/6

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Computer Science Applications
    • Applied Mathematics
    • Electrical and Electronic Engineering

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