(In,Ga)As gated-vertical quantum dot with an Al2O3 insulator

T. Kita; D. Chiba; Y. Ohno; H. Ohno

doi:10.1063/1.2437060

(In,Ga)As gated-vertical quantum dot with an Al₂O₃ insulator

T. Kita, D. Chiba, Y. Ohno, H. Ohno

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7 Citations (Scopus)

Abstract

The authors fabricated a gated-vertical (In,Ga)As quantum dot with an Al2 O3 gate insulator deposited using atomic layer deposition and investigated its electrical transport properties at low temperatures. The gate voltage dependence of the dIdV-V characteristics shows clear Coulomb diamonds at 1.1 K. The metal-insulator gate structure allowed the authors to control the number of electrons in the quantum dot from 0 to a large number estimated to be about 130.

Original language	English
Article number	062102
Journal	Applied Physics Letters
Volume	90
Issue number	6
DOIs	https://doi.org/10.1063/1.2437060
Publication status	Published - 2007

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2437060

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title = "(In,Ga)As gated-vertical quantum dot with an Al2O3 insulator",

abstract = "The authors fabricated a gated-vertical (In,Ga)As quantum dot with an Al2 O3 gate insulator deposited using atomic layer deposition and investigated its electrical transport properties at low temperatures. The gate voltage dependence of the dIdV-V characteristics shows clear Coulomb diamonds at 1.1 K. The metal-insulator gate structure allowed the authors to control the number of electrons in the quantum dot from 0 to a large number estimated to be about 130.",

author = "T. Kita and D. Chiba and Y. Ohno and H. Ohno",

note = "Funding Information: The authors wish to acknowledge S. Tarucha, Y. Nishi, T. Hatano, and T. Yamaguchi for valuable discussions. They also thank K. Ohtani for discussion and his guidance. This work was partly supported by the Japan Society for the Promotion of Science. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

year = "2007",

doi = "10.1063/1.2437060",

language = "English",

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journal = "Applied Physics Letters",

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T1 - (In,Ga)As gated-vertical quantum dot with an Al2O3 insulator

AU - Kita, T.

AU - Chiba, D.

AU - Ohno, Y.

AU - Ohno, H.

N1 - Funding Information: The authors wish to acknowledge S. Tarucha, Y. Nishi, T. Hatano, and T. Yamaguchi for valuable discussions. They also thank K. Ohtani for discussion and his guidance. This work was partly supported by the Japan Society for the Promotion of Science. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2007

Y1 - 2007

N2 - The authors fabricated a gated-vertical (In,Ga)As quantum dot with an Al2 O3 gate insulator deposited using atomic layer deposition and investigated its electrical transport properties at low temperatures. The gate voltage dependence of the dIdV-V characteristics shows clear Coulomb diamonds at 1.1 K. The metal-insulator gate structure allowed the authors to control the number of electrons in the quantum dot from 0 to a large number estimated to be about 130.

AB - The authors fabricated a gated-vertical (In,Ga)As quantum dot with an Al2 O3 gate insulator deposited using atomic layer deposition and investigated its electrical transport properties at low temperatures. The gate voltage dependence of the dIdV-V characteristics shows clear Coulomb diamonds at 1.1 K. The metal-insulator gate structure allowed the authors to control the number of electrons in the quantum dot from 0 to a large number estimated to be about 130.

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DO - 10.1063/1.2437060

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SN - 0003-6951

IS - 6

M1 - 062102

ER -

(In,Ga)As gated-vertical quantum dot with an Al₂O₃ insulator

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