Infrared study of tris(dimethylamino)silane adsorption and ozone irradiation on Si(100) surfaces for ALD of SiO2

Yuta Kinoshita, Fumihiko Hirose, Hironobu Miya, Kazuhiro Hirahara, Yasuo Kimura, Michio Niwano

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34 Citations (Scopus)

Abstract

Adsorption of tris(dimethylamino)silane { [(C H3) 2 N]3 SiH, TDMAS} and decomposition of the adsorbed TDMAS with an ozone ambient on Si(100) surfaces as an atomic layer deposition (ALD) process of Si O2 have been investigated using Fourier transform infrared absorption spectroscopy (IRAS) with a multiple internal reflection geometry. TDMAS dissociatively adsorbs on the Si(100) surface to produce adsorbates including hydroaminocarbons and Si hydrides even at room temperature. IRAS suggests that TDMAS adsorbs preferentially on OH sites on Si surfaces that are produced by an H2 O adsorption. Ozone oxidizes TDMAS adsorbed on the Si surface and makes the surface active to further TDMAS adsorption to progress the ALD cycle. The mechanism of Si O2 ALD process with TDMAS and ozone is discussed in this paper.

Original languageEnglish
Pages (from-to)G80-G83
JournalElectrochemical and Solid-State Letters
Volume10
Issue number10
DOIs
Publication statusPublished - 2007 Aug 17

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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