Infrared study of SiH4-adsorbed Si(100) surfaces: Observation and mode assignment of new peaks

Y. Tsukidate, M. Suemitsu

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

SiHn adspecies on Si(100)-2 × surfaces adsorbed with SiH4 have been studied using multiple-internal-reflection infrared spectroscopy. In addition to the stretching modes of SiH, SiH2, and SiH3 known to be present on H-terminated Si surfaces, three new peaks were observed at 2036, 2060-2064, and 2077 cm-1. By observing the change of the peak intensities before and after the 300°C annealing as well as the effects of polarized radiation, the stretching modes at 2060-2064 cm-1 were concluded to be related to step-edge monohydrides, while the one at 2077 cm-1 was considered to be related to the monohydride at a dimer whose counterpart is -SiH3. Moreover, the SiH2 vibration is assigned to the bridging dihydrides between dimers, which is different from the one on HF-treated Si(100) known to be formed by breakage of the dimer bonds. These stretching modes are closely related to the presence of Si adatoms on the surface, providing new convenient probes for studying surface chemistry during epitaxy using SiH4 or Si2H6.

Original languageEnglish
Pages (from-to)5206-5210
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number9 A
DOIs
Publication statusPublished - 2001 Sep

Keywords

  • CVD
  • Epitaxy
  • Gas-source MBE
  • Hydrogen
  • Infrared spectroscopy
  • Multiple internal reflection
  • Si(100)
  • Silane

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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