Infrared study of chemistry of Si surfaces in etching solution

Michio Niwano, Taka Aki Miura, Ryo Tajima, Nobuo Miyamoto

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


The chemistry of Si(100) and (111) surfaces during immersion in dilute hydrofluoric acid (HF) solution was investigated 'in-situ' and in real time using infrared absorption spectroscopy in the multiple internal reflection geometry. We demonstrate that in dilute HF solution, Si surfaces are not perfectly terminated by hydrogen, but is covered in part with hydrogen-associated Si fluorides, such as SiH2(SiF) and SiH2F2. We find the hydrogen coverage of the surface in dilute HF solution depends on the HF concentration of the solution. It is shown that rinsing in water following HF treatment leads to complete hydrogen termination of the surface. The present results suggest that hydrogen-associated Si fluorides are involved in the etching of Si crystal surfaces.

Original languageEnglish
Pages (from-to)607-611
Number of pages5
JournalApplied Surface Science
Publication statusPublished - 1996 Jul
Externally publishedYes

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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