Infrared study of carbon incorporation during chemical vapor deposition of SiC using methylsilanes

Masanori Shinohara, Yasuo Kimura, Daisei Shoji, Michio Niwano

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24 Citations (Scopus)

Abstract

We use infrared absorption spectroscopy (IRAS) in the multiple internal reflection geometry to investigate the carbon incorporation during chemical vapor deposition of SiC on Si(1 0 0) using methylsilanes, SiH x (CH 3 ) 4-x (x = 1-3). We have measured IRAS spectra in the Si-H stretching vibration region of the Si(1 0 0) surface that was dosed with methylsilanes at temperatures ranging from 300 to 500°C. IRAS data demonstrate that at temperatures below 400°C, methylsilane is thermally decomposed to form a doubly occupied dimer (DOD, =HSi-SiH=) and a mixed adatom dimer (=HSi-SiH=). At higher temperatures, carbon atoms that are released from the methyl group, attack the backbonds of surface Si atoms to generate amorphous carbon-incorporated layers that include Si atoms having two or three C atoms bound to them. It is found that the carbon incorporation is enhanced with the increase of the number of methyl groups of methylsilane.

Original languageEnglish
Pages (from-to)591-596
Number of pages6
JournalApplied Surface Science
Volume175-176
DOIs
Publication statusPublished - 2001 May 15
Externally publishedYes

Keywords

  • Adsorption
  • Infrared absorption
  • Methylsilane
  • Si surface
  • Thermal decomposition

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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