TY - JOUR
T1 - Infrared study of carbon incorporation during chemical vapor deposition of SiC using methylsilanes
AU - Shinohara, Masanori
AU - Kimura, Yasuo
AU - Shoji, Daisei
AU - Niwano, Michio
N1 - Funding Information:
Part of this work was supported by a grand-in-aid for Basic Scientific Research (Grand No. 11304018) from the Ministry of Education, Science, Sports and Culture of Japan.
PY - 2001/5/15
Y1 - 2001/5/15
N2 - We use infrared absorption spectroscopy (IRAS) in the multiple internal reflection geometry to investigate the carbon incorporation during chemical vapor deposition of SiC on Si(1 0 0) using methylsilanes, SiH x (CH 3 ) 4-x (x = 1-3). We have measured IRAS spectra in the Si-H stretching vibration region of the Si(1 0 0) surface that was dosed with methylsilanes at temperatures ranging from 300 to 500°C. IRAS data demonstrate that at temperatures below 400°C, methylsilane is thermally decomposed to form a doubly occupied dimer (DOD, =HSi-SiH=) and a mixed adatom dimer (=HSi-SiH=). At higher temperatures, carbon atoms that are released from the methyl group, attack the backbonds of surface Si atoms to generate amorphous carbon-incorporated layers that include Si atoms having two or three C atoms bound to them. It is found that the carbon incorporation is enhanced with the increase of the number of methyl groups of methylsilane.
AB - We use infrared absorption spectroscopy (IRAS) in the multiple internal reflection geometry to investigate the carbon incorporation during chemical vapor deposition of SiC on Si(1 0 0) using methylsilanes, SiH x (CH 3 ) 4-x (x = 1-3). We have measured IRAS spectra in the Si-H stretching vibration region of the Si(1 0 0) surface that was dosed with methylsilanes at temperatures ranging from 300 to 500°C. IRAS data demonstrate that at temperatures below 400°C, methylsilane is thermally decomposed to form a doubly occupied dimer (DOD, =HSi-SiH=) and a mixed adatom dimer (=HSi-SiH=). At higher temperatures, carbon atoms that are released from the methyl group, attack the backbonds of surface Si atoms to generate amorphous carbon-incorporated layers that include Si atoms having two or three C atoms bound to them. It is found that the carbon incorporation is enhanced with the increase of the number of methyl groups of methylsilane.
KW - Adsorption
KW - Infrared absorption
KW - Methylsilane
KW - Si surface
KW - Thermal decomposition
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U2 - 10.1016/S0169-4332(01)00137-4
DO - 10.1016/S0169-4332(01)00137-4
M3 - Article
AN - SCOPUS:0035873459
VL - 175-176
SP - 591
EP - 596
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
ER -