Abstract
We have studied the initial stages of oxidation of the hydrogen-terminated Si(111) and (100) surfaces stored in air, using infrared spectroscopy in the multiple internal reflection geometry. We investigate the effect of surface roughness and humidity of air on the oxidation of the hydrogen-terminated Si surfaces. We suggest that surface roughness on a microscopic scale does not significantly affect the oxidation of the hydrogen-terminated Si surface and the oxidation occurs on the entire surface. It is demonstrated that water is predominantly involved in the oxidation of the surface Si - H bond, and that the surface Si - H bond is quite inert to the oxygen molecule.
| Original language | English |
|---|---|
| Pages (from-to) | 2157-2163 |
| Number of pages | 7 |
| Journal | Journal of Applied Physics |
| Volume | 76 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 1994 Dec 1 |
ASJC Scopus subject areas
- Physics and Astronomy(all)
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Niwano, M., Kageyama, J. I., Kurita, K., Kinashi, K., Takahashi, I., & Miyamoto, N. (1994). Infrared spectroscopy study of initial stages of oxidation of hydrogen-terminated Si surfaces stored in air. Journal of Applied Physics, 76(4), 2157-2163. https://doi.org/10.1063/1.357627