Infrared photodetectors based on graphene van der Waals heterostructures

V. Ryzhii, M. Ryzhii, D. Svintsov, V. Leiman, V. Mitin, M. S. Shur, T. Otsuji

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)

Abstract

We propose and evaluate the graphene layer (GL) infrared photodetectors (GLIPs) based on the van der Waals (vdW) heterostructures with the radiation absorbing GLs. The operation of the GLIPs is associated with the electron photoexcitation from the GL valence band to the continuum states above the inter-GL barriers (either via tunneling or direct transitions to the continuum states). Using the developed device model, we calculate the photodetector characteristics as functions of the GL-vdW heterostructure parameters. We show that due to a relatively large efficiency of the electron photoexcitation and low capture efficiency of the electrons propagating over the barriers in the inter-GL layers, GLIPs should exhibit the elevated photoelectric gain and detector responsivity as well as relatively high detectivity. The possibility of high-speed operation, high conductivity, transparency of the GLIP contact layers, and the sensitivity to normally incident IR radiation provides additional potential advantages in comparison with other IR photodetectors. In particular, the proposed GLIPs can compete with unitravelling-carrier photodetectors.

Original languageEnglish
Pages (from-to)72-81
Number of pages10
JournalInfrared Physics and Technology
Volume84
DOIs
Publication statusPublished - 2017 Aug

Keywords

  • Graphene
  • Infrared photodetector
  • Van der Waals heterostructure

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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