Infrared monitoring system for the detection of organic contamination on a 300 mm Si wafer

Michiaki Endo, Haruo Yoshida, Yasuhiro Maeda, Nobuo Miyamoto, Michio Niwano

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

An infrared (IR) monitoring system has been developed for the detection and characterization of hydrocarbon contamination on 300 mm (12 in.) Si wafer surfaces. IR propagates through the Si wafer, internally reflecting about 600 times, which enables us to detect a trace of organic contamination on the wafer surface. The present system allows for the detection of hydrocarbon contamination on 300 mm Si wafer surfaces with a contamination level of below 1011 carbon atoms/cm2. [S0003-6951(99)03830-9]

Original languageEnglish
Pages (from-to)519-521
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number4
DOIs
Publication statusPublished - 1999 Jul 26

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint

Dive into the research topics of 'Infrared monitoring system for the detection of organic contamination on a 300 mm Si wafer'. Together they form a unique fingerprint.

Cite this