Abstract
An infrared (IR) monitoring system has been developed for the detection and characterization of hydrocarbon contamination on 300 mm (12 in.) Si wafer surfaces. IR propagates through the Si wafer, internally reflecting about 600 times, which enables us to detect a trace of organic contamination on the wafer surface. The present system allows for the detection of hydrocarbon contamination on 300 mm Si wafer surfaces with a contamination level of below 1011 carbon atoms/cm2. [S0003-6951(99)03830-9]
Original language | English |
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Pages (from-to) | 519-521 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 75 |
Issue number | 4 |
DOIs | |
Publication status | Published - 1999 Jul 26 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)