Infrared monitoring system for the detection of organic contamination on a 300 mm Si wafer

Michiaki Endo; Haruo Yoshida; Yasuhiro Maeda; Nobuo Miyamoto; Michio Niwano

doi:10.1063/1.124434

Infrared monitoring system for the detection of organic contamination on a 300 mm Si wafer

Michiaki Endo, Haruo Yoshida, Yasuhiro Maeda, Nobuo Miyamoto, Michio Niwano

Human Information Systems Division

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17 Citations (Scopus)

Abstract

An infrared (IR) monitoring system has been developed for the detection and characterization of hydrocarbon contamination on 300 mm (12 in.) Si wafer surfaces. IR propagates through the Si wafer, internally reflecting about 600 times, which enables us to detect a trace of organic contamination on the wafer surface. The present system allows for the detection of hydrocarbon contamination on 300 mm Si wafer surfaces with a contamination level of below 10¹¹ carbon atoms/cm². [S0003-6951(99)03830-9]

Original language	English
Pages (from-to)	519-521
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	4
DOIs	https://doi.org/10.1063/1.124434
Publication status	Published - 1999 Jul 26

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "An infrared (IR) monitoring system has been developed for the detection and characterization of hydrocarbon contamination on 300 mm (12 in.) Si wafer surfaces. IR propagates through the Si wafer, internally reflecting about 600 times, which enables us to detect a trace of organic contamination on the wafer surface. The present system allows for the detection of hydrocarbon contamination on 300 mm Si wafer surfaces with a contamination level of below 1011 carbon atoms/cm2. [S0003-6951(99)03830-9]",

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AU - Endo, Michiaki

AU - Yoshida, Haruo

AU - Maeda, Yasuhiro

AU - Miyamoto, Nobuo

AU - Niwano, Michio

PY - 1999/7/26

Y1 - 1999/7/26

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AB - An infrared (IR) monitoring system has been developed for the detection and characterization of hydrocarbon contamination on 300 mm (12 in.) Si wafer surfaces. IR propagates through the Si wafer, internally reflecting about 600 times, which enables us to detect a trace of organic contamination on the wafer surface. The present system allows for the detection of hydrocarbon contamination on 300 mm Si wafer surfaces with a contamination level of below 1011 carbon atoms/cm2. [S0003-6951(99)03830-9]

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