Influences of solution flow and lateral temperature distribution on surface morphology in solution growth of SiC

Kuniharu Fujii, Koichi Takei, Masahiro Aoshima, Nachimuthu Senguttuvan, Masahiko Hiratani, Toru Ujihara, Yuji Matsumoto, Tomohisa Kato, Kazuhisa Kurashige, Hajime Okumura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The influences of solution flow and lateral temperature distribution on the surface morphology of 4H-SiC single crystal grown from solution was investigated. A flat surface region was enlarged by the seed-rotation rate. The solution flow simulation indicated that the higher rotation rate made the outward solution flow ordered beneath the solution surface. Such a solution flow was thought to be effective to enlarge the flat region of the growth front. Furthermore, a full-flat surface was obtained with a hollow-type graphite rod at a seed-rotation rate of 60 min-1. The simulated results of temperature distribution showed that the hollow-type graphite rod reduced the lateral temperature gradient at the SiC-solution interface. The ordered solution flow and the small temperature gradient at the growth front were found to be effective to make the growth front flat in the solution-growth method.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2014
EditorsDidier Chaussende, Gabriel Ferro
PublisherTrans Tech Publications Ltd
Pages35-38
Number of pages4
ISBN (Print)9783038354789
DOIs
Publication statusPublished - 2015 Jan 1
EventEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014 - Grenoble, France
Duration: 2014 Sep 212014 Sep 25

Publication series

NameMaterials Science Forum
Volume821-823
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

OtherEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014
CountryFrance
CityGrenoble
Period14/9/2114/9/25

Keywords

  • Crystal growth
  • Morphology
  • SiC
  • Solution flow
  • Temperature distribution

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Fujii, K., Takei, K., Aoshima, M., Senguttuvan, N., Hiratani, M., Ujihara, T., Matsumoto, Y., Kato, T., Kurashige, K., & Okumura, H. (2015). Influences of solution flow and lateral temperature distribution on surface morphology in solution growth of SiC. In D. Chaussende, & G. Ferro (Eds.), Silicon Carbide and Related Materials 2014 (pp. 35-38). (Materials Science Forum; Vol. 821-823). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.821-823.35