Influences of annealing conditions on flatband voltage properties using continuously workfunction-tuned metal electrodes

K. Ohmori; P. Ahmet; K. Shiraishi; H. Watanabe; Y. Akasaka; K. Yamabe; M. Yoshitake; K. S. Chang; M. L. Green; K. Yamada; Toyohiro Chikyo

doi:10.1109/IWNC.2006.4570988

Influences of annealing conditions on flatband voltage properties using continuously workfunction-tuned metal electrodes

K. Ohmori, P. Ahmet, K. Shiraishi, H. Watanabe, Y. Akasaka, K. Yamabe, M. Yoshitake, K. S. Chang, M. L. Green, K. Yamada, Toyohiro Chikyo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006
Pages	160-162
Number of pages	3
DOIs	https://doi.org/10.1109/IWNC.2006.4570988
Publication status	Published - 2006 Dec 1
Externally published	Yes
Event	1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006 - Mishima, Shizuoka, Japan Duration: 2006 Jan 30 → 2006 Feb 1

Publication series

Name	2006 International Workshop on Nano CMOS - Proceedings, IWNC

Other

Other	1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006
Country	Japan
City	Mishima, Shizuoka
Period	06/1/30 → 06/2/1

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/IWNC.2006.4570988

Cite this

Ohmori, K., Ahmet, P., Shiraishi, K., Watanabe, H., Akasaka, Y., Yamabe, K., Yoshitake, M., Chang, K. S., Green, M. L., Yamada, K., & Chikyo, T. (2006). Influences of annealing conditions on flatband voltage properties using continuously workfunction-tuned metal electrodes. In 1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006 (pp. 160-162). [4570988] (2006 International Workshop on Nano CMOS - Proceedings, IWNC). https://doi.org/10.1109/IWNC.2006.4570988

Influences of annealing conditions on flatband voltage properties using continuously workfunction-tuned metal electrodes. / Ohmori, K.; Ahmet, P.; Shiraishi, K.; Watanabe, H.; Akasaka, Y.; Yamabe, K.; Yoshitake, M.; Chang, K. S.; Green, M. L.; Yamada, K.; Chikyo, Toyohiro.

1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006. 2006. p. 160-162 4570988 (2006 International Workshop on Nano CMOS - Proceedings, IWNC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ohmori, K, Ahmet, P, Shiraishi, K, Watanabe, H, Akasaka, Y, Yamabe, K, Yoshitake, M, Chang, KS, Green, ML, Yamada, K & Chikyo, T 2006, Influences of annealing conditions on flatband voltage properties using continuously workfunction-tuned metal electrodes. in 1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006., 4570988, 2006 International Workshop on Nano CMOS - Proceedings, IWNC, pp. 160-162, 1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006, Mishima, Shizuoka, Japan, 06/1/30. https://doi.org/10.1109/IWNC.2006.4570988

Ohmori K, Ahmet P, Shiraishi K, Watanabe H, Akasaka Y, Yamabe K et al. Influences of annealing conditions on flatband voltage properties using continuously workfunction-tuned metal electrodes. In 1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006. 2006. p. 160-162. 4570988. (2006 International Workshop on Nano CMOS - Proceedings, IWNC). https://doi.org/10.1109/IWNC.2006.4570988

Ohmori, K. ; Ahmet, P. ; Shiraishi, K. ; Watanabe, H. ; Akasaka, Y. ; Yamabe, K. ; Yoshitake, M. ; Chang, K. S. ; Green, M. L. ; Yamada, K. ; Chikyo, Toyohiro. / Influences of annealing conditions on flatband voltage properties using continuously workfunction-tuned metal electrodes. 1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006. 2006. pp. 160-162 (2006 International Workshop on Nano CMOS - Proceedings, IWNC).

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author = "K. Ohmori and P. Ahmet and K. Shiraishi and H. Watanabe and Y. Akasaka and K. Yamabe and M. Yoshitake and Chang, {K. S.} and Green, {M. L.} and K. Yamada and Toyohiro Chikyo",

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