Influences of annealing conditions on flatband voltage properties using continuously workfunction-tuned metal electrodes

K. Ohmori; P. Ahmet; K. Shiraishi; H. Watanabe; Y. Akasaka; K. Yamabe; M. Yoshitake; K. S. Chang; M. L. Green; K. Yamada; T. Chikyow

doi:10.1109/IWNC.2006.4570988

Influences of annealing conditions on flatband voltage properties using continuously workfunction-tuned metal electrodes

K. Ohmori, P. Ahmet, K. Shiraishi, H. Watanabe, Y. Akasaka, K. Yamabe, M. Yoshitake, K. S. Chang, M. L. Green, K. Yamada, T. Chikyow

Advanced Institute for Materials Research (AIMR)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006
Pages	160-162
Number of pages	3
DOIs	https://doi.org/10.1109/IWNC.2006.4570988
Publication status	Published - 2006
Event	1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006 - Mishima, Shizuoka, Japan Duration: 2006 Jan 30 → 2006 Feb 1

Publication series

Name	2006 International Workshop on Nano CMOS - Proceedings, IWNC

Other

Other	1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006
Country/Territory	Japan
City	Mishima, Shizuoka
Period	06/1/30 → 06/2/1

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/IWNC.2006.4570988

Cite this

Ohmori, K., Ahmet, P., Shiraishi, K., Watanabe, H., Akasaka, Y., Yamabe, K., Yoshitake, M., Chang, K. S., Green, M. L., Yamada, K., & Chikyow, T. (2006). Influences of annealing conditions on flatband voltage properties using continuously workfunction-tuned metal electrodes. In 1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006 (pp. 160-162). [4570988] (2006 International Workshop on Nano CMOS - Proceedings, IWNC). https://doi.org/10.1109/IWNC.2006.4570988

Influences of annealing conditions on flatband voltage properties using continuously workfunction-tuned metal electrodes. / Ohmori, K.; Ahmet, P.; Shiraishi, K. et al.

1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006. 2006. p. 160-162 4570988 (2006 International Workshop on Nano CMOS - Proceedings, IWNC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ohmori, K, Ahmet, P, Shiraishi, K, Watanabe, H, Akasaka, Y, Yamabe, K, Yoshitake, M, Chang, KS, Green, ML, Yamada, K & Chikyow, T 2006, Influences of annealing conditions on flatband voltage properties using continuously workfunction-tuned metal electrodes. in 1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006., 4570988, 2006 International Workshop on Nano CMOS - Proceedings, IWNC, pp. 160-162, 1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006, Mishima, Shizuoka, Japan, 06/1/30. https://doi.org/10.1109/IWNC.2006.4570988

Ohmori K, Ahmet P, Shiraishi K, Watanabe H, Akasaka Y, Yamabe K et al. Influences of annealing conditions on flatband voltage properties using continuously workfunction-tuned metal electrodes. In 1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006. 2006. p. 160-162. 4570988. (2006 International Workshop on Nano CMOS - Proceedings, IWNC). doi: 10.1109/IWNC.2006.4570988

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title = "Influences of annealing conditions on flatband voltage properties using continuously workfunction-tuned metal electrodes",

author = "K. Ohmori and P. Ahmet and K. Shiraishi and H. Watanabe and Y. Akasaka and K. Yamabe and M. Yoshitake and Chang, {K. S.} and Green, {M. L.} and K. Yamada and T. Chikyow",

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AU - Akasaka, Y.

AU - Yamabe, K.

AU - Yoshitake, M.

AU - Chang, K. S.

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ER -

Influences of annealing conditions on flatband voltage properties using continuously workfunction-tuned metal electrodes

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Other

ASJC Scopus subject areas

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