Influence of third elements on the anisotropic magnetoresistance in permalloy films

H. Nagura, K. Saito, Koki Takanashi, H. Fujimori

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The influence of the addition of third elements into permalloy films on anisotropic magnetoresistance (AMR) has been investigated for a large number of third elements. AMR decreases rapidly for the addition of Sc, Ti, V, Cr, Ge, Zr, Nb, Mo, Ru, Ta and W. On the other hand, the decreases in AMR are relatively slow for the addition of Co, Cu, Pd, Ag, Pt and Au. We have found the tendency that the influence of the elements which are situated near Ni in the periodic table is smaller than that of the elements which are situated far from Ni.

Original languageEnglish
Pages (from-to)53-58
Number of pages6
JournalJournal of Magnetism and Magnetic Materials
Volume212
Issue number1
DOIs
Publication statusPublished - 2000 Jan 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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