Influence of the stacking order on structural features of the Cu-In-Ga-Se precursors for formation of Cu(In,Ga)Se2 thin films prepared by thermal reaction of InSe/Cu/GaSe alloys to elemental Se vapor and diethylselenide gas

F. B. Dejene, M. Sugiyama, H. Nakanishi, V. Alberts, S. F. Chichibu

Research output: Contribution to journalConference articlepeer-review

Abstract

A novel partway for the fabrication of copper-indium (gallium) diselenide has been developed. This two-stage process consists of the formation of Cu-In-(Ga)-Se precursors and subsequent selenization to form CuIn(Ga)Se 2. In this work, we have investigated and compared the possible interactions in Cu-In-Ga-Se systems, using sequentially stacked precursors premixed with Se, in order to get a better understanding of the Cu(In,Ga)Se 2 thin film formation. Comparison of these SEM micrographs clearly revealed that the surface morphologies and hence surface roughness of the resulting Cu(In,Ga)Se2 absorber films were significantly influenced by the structure of the precursor films prior to selenization. XRD analyses revealed the presence of a graded CuIn1-xGaxSe structure, irrespective of the stacking order during the precursor formation step for samples selenized using elemental Se vapor. It was established that distinct from the case of using Se vapor, a single-phase Cu(In,Ga)Se2 films were obtained by diethylselenide (DESe) selenization from Cu-In-Ga metal precursors premixed Se irrespective of the stacking order during the precursor formation step.

Original languageEnglish
Pages (from-to)2572-2575
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume3
Issue number8
DOIs
Publication statusPublished - 2006 Oct 31
Externally publishedYes
Event15th International Conference on Ternary and Multinary Compounds, ICTMC-15 - Kyoto, Japan
Duration: 2006 Mar 62006 Mar 10

ASJC Scopus subject areas

  • Condensed Matter Physics

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