Influence of the elastic strain on the band structure of ellipsoidal SiGe coherently embedded in the Si matrix

Noritaka Usami, Tetsu Ichitsubo, Toru Ujihara, Tatsuya Takahashi, Kozo Fujiwara, Gen Sazaki, Kazuo Nakajima

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

The influence of the elastic strain on the band structure of ellipsoidal SiGe coherently embedded in the Si matrix was investigated. The strain was calculated as a function of the Ge fraction in SiGe. The band gap of strained SiGe was also calculated. The deviation of the aspect ratio from unity was found to be effective to decrease the band gap.

Original languageEnglish
Pages (from-to)916-920
Number of pages5
JournalJournal of Applied Physics
Volume94
Issue number2
DOIs
Publication statusPublished - 2003 Jul 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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