The influence of the elastic strain on the band structure of ellipsoidal SiGe coherently embedded in the Si matrix was investigated. The strain was calculated as a function of the Ge fraction in SiGe. The band gap of strained SiGe was also calculated. The deviation of the aspect ratio from unity was found to be effective to decrease the band gap.
ASJC Scopus subject areas
- Physics and Astronomy(all)