Influence of synthetic antiferromagnet free layer on current-perpendicular- to-plane spin-valves

Y. Jiang, S. Abe, T. Nozaki, N. Tezuka, K. Inomata

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We study current-perpendicular-to-plane (CPP) geometrical giant magnetoresistance (GMR) and magnetic switching property for single spin-valves (SVs). Applying a synthetic antiferromagnet (SyAF) instead of a single ferromagnet film as a free layer, the resistance-change area product ΔRA of the SVs is strongly enhanced from ∼1.84 mΩ μm2 to ∼ 16.8 mΩ μm2 and the CPP-GMR ratio changes from 0.8% to 3.6%. The study of the magnetic switching behavior by both experiment and single-domain thermal activation modeling shows that the SVs with SyAF as a free layer approaches a single-domain magnet even with a low aspect ratio 1 as long as its size diminishes to ∼ 0.18 μm2. Because of the single-domain structure, the SVs with SyAF give a size-independent magnetic switching field when the aspect ratio is 1.

Original languageEnglish
Pages (from-to)2245-2247
Number of pages3
JournalIEEE Transactions on Magnetics
Volume40
Issue number4 II
DOIs
Publication statusPublished - 2004 Jul 1

Keywords

  • Giant magnetoresistance (GMR)
  • Magnetic domains
  • Spin-valves (SVs)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Influence of synthetic antiferromagnet free layer on current-perpendicular- to-plane spin-valves'. Together they form a unique fingerprint.

Cite this