We study current-perpendicular-to-plane (CPP) geometrical giant magnetoresistance (GMR) and magnetic switching property for single spin-valves (SVs). Applying a synthetic antiferromagnet (SyAF) instead of a single ferromagnet film as a free layer, the resistance-change area product ΔRA of the SVs is strongly enhanced from ∼1.84 mΩ μm2 to ∼ 16.8 mΩ μm2 and the CPP-GMR ratio changes from 0.8% to 3.6%. The study of the magnetic switching behavior by both experiment and single-domain thermal activation modeling shows that the SVs with SyAF as a free layer approaches a single-domain magnet even with a low aspect ratio 1 as long as its size diminishes to ∼ 0.18 μm2. Because of the single-domain structure, the SVs with SyAF give a size-independent magnetic switching field when the aspect ratio is 1.
- Giant magnetoresistance (GMR)
- Magnetic domains
- Spin-valves (SVs)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering