Influence of synthetic antiferromagnet free layer on current-perpendicular- to-plane spin-valves

Y. Jiang; S. Abe; T. Nozaki; N. Tezuka; K. Inomata

doi:10.1109/TMAG.2004.830231

Influence of synthetic antiferromagnet free layer on current-perpendicular- to-plane spin-valves

Y. Jiang, S. Abe, T. Nozaki, N. Tezuka, K. Inomata

ENG - Materials Science

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We study current-perpendicular-to-plane (CPP) geometrical giant magnetoresistance (GMR) and magnetic switching property for single spin-valves (SVs). Applying a synthetic antiferromagnet (SyAF) instead of a single ferromagnet film as a free layer, the resistance-change area product ΔRA of the SVs is strongly enhanced from ∼1.84 mΩ μm² to ∼ 16.8 mΩ μm² and the CPP-GMR ratio changes from 0.8% to 3.6%. The study of the magnetic switching behavior by both experiment and single-domain thermal activation modeling shows that the SVs with SyAF as a free layer approaches a single-domain magnet even with a low aspect ratio 1 as long as its size diminishes to ∼ 0.18 μm². Because of the single-domain structure, the SVs with SyAF give a size-independent magnetic switching field when the aspect ratio is 1.

Original language	English
Pages (from-to)	2245-2247
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	40
Issue number	4 II
DOIs	https://doi.org/10.1109/TMAG.2004.830231
Publication status	Published - 2004 Jul

Keywords

Giant magnetoresistance (GMR)
Magnetic domains
Spin-valves (SVs)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Influence of synthetic antiferromagnet free layer on current-perpendicular- to-plane spin-valves",

abstract = "We study current-perpendicular-to-plane (CPP) geometrical giant magnetoresistance (GMR) and magnetic switching property for single spin-valves (SVs). Applying a synthetic antiferromagnet (SyAF) instead of a single ferromagnet film as a free layer, the resistance-change area product ΔRA of the SVs is strongly enhanced from ∼1.84 mΩ μm2 to ∼ 16.8 mΩ μm2 and the CPP-GMR ratio changes from 0.8% to 3.6%. The study of the magnetic switching behavior by both experiment and single-domain thermal activation modeling shows that the SVs with SyAF as a free layer approaches a single-domain magnet even with a low aspect ratio 1 as long as its size diminishes to ∼ 0.18 μm2. Because of the single-domain structure, the SVs with SyAF give a size-independent magnetic switching field when the aspect ratio is 1.",

keywords = "Giant magnetoresistance (GMR), Magnetic domains, Spin-valves (SVs)",

author = "Y. Jiang and S. Abe and T. Nozaki and N. Tezuka and K. Inomata",

note = "Funding Information: Manuscript received October 1, 2001. This work was supported by IT-program of Research Revolution 2002 (RR 2002), the Priority Area, 1407602 from MEXT, NEDO grant for NAME and SCAT.",

year = "2004",

month = jul,

doi = "10.1109/TMAG.2004.830231",

language = "English",

volume = "40",

pages = "2245--2247",

journal = "IEEE Transactions on Magnetics",

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T1 - Influence of synthetic antiferromagnet free layer on current-perpendicular- to-plane spin-valves

AU - Jiang, Y.

AU - Abe, S.

AU - Nozaki, T.

AU - Tezuka, N.

AU - Inomata, K.

N1 - Funding Information: Manuscript received October 1, 2001. This work was supported by IT-program of Research Revolution 2002 (RR 2002), the Priority Area, 1407602 from MEXT, NEDO grant for NAME and SCAT.

PY - 2004/7

Y1 - 2004/7

N2 - We study current-perpendicular-to-plane (CPP) geometrical giant magnetoresistance (GMR) and magnetic switching property for single spin-valves (SVs). Applying a synthetic antiferromagnet (SyAF) instead of a single ferromagnet film as a free layer, the resistance-change area product ΔRA of the SVs is strongly enhanced from ∼1.84 mΩ μm2 to ∼ 16.8 mΩ μm2 and the CPP-GMR ratio changes from 0.8% to 3.6%. The study of the magnetic switching behavior by both experiment and single-domain thermal activation modeling shows that the SVs with SyAF as a free layer approaches a single-domain magnet even with a low aspect ratio 1 as long as its size diminishes to ∼ 0.18 μm2. Because of the single-domain structure, the SVs with SyAF give a size-independent magnetic switching field when the aspect ratio is 1.

AB - We study current-perpendicular-to-plane (CPP) geometrical giant magnetoresistance (GMR) and magnetic switching property for single spin-valves (SVs). Applying a synthetic antiferromagnet (SyAF) instead of a single ferromagnet film as a free layer, the resistance-change area product ΔRA of the SVs is strongly enhanced from ∼1.84 mΩ μm2 to ∼ 16.8 mΩ μm2 and the CPP-GMR ratio changes from 0.8% to 3.6%. The study of the magnetic switching behavior by both experiment and single-domain thermal activation modeling shows that the SVs with SyAF as a free layer approaches a single-domain magnet even with a low aspect ratio 1 as long as its size diminishes to ∼ 0.18 μm2. Because of the single-domain structure, the SVs with SyAF give a size-independent magnetic switching field when the aspect ratio is 1.

KW - Giant magnetoresistance (GMR)

KW - Magnetic domains

KW - Spin-valves (SVs)

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Influence of synthetic antiferromagnet free layer on current-perpendicular- to-plane spin-valves

Abstract

Keywords

ASJC Scopus subject areas

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