INFLUENCE OF SUBSTRATE TEMPERATURE ON THE GROWTH OF AlGaAs/GaAs QUANTUM WELL HETEROSTRUCTURES BY ORGANOMETALLIC VAPOR PHASE EPITAXY.

J. R. Shealy, G. W. Wicks, Hideo Ohno, L. F. Eastman

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

The growth of AlGaAs/GaAs quantum well heterostructures by organometallic vapor phase epitaxy has been investigated over a range of substrate temperature from 500 degree C to 700 degree C. Low temperature photoluminescence from single quantum wells less than 150 A in width has been observed at low excitation levels. Evidence of a graded heterostructure interface was observed in samples grown at higher substrate temperatures.

Original languageEnglish
Pages (from-to)639-641
Number of pages3
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume22
Issue number10
Publication statusPublished - 1983 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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