Abstract
Pt thin films were deposited on Si substrates by applying a negative substrate bias voltage using a non-mass separated ion beam deposition method. The effect of the substrate bias voltage on the properties of the deposited films was investigated. In the case of Pt thin films deposited without the substrate bias voltage, a columnar structure and small grains were observed. The electrical resistivity of the deposited Pt films was very high (49.3 ± 0.65 μΩ cm). By increasing the substrate bias voltage, no clear columnar structure was observed. At the substrate bias voltage of - 75 V, the resistivity of the Pt film showed a minimum value of 16.9 ± 0.2 μΩ cm closed to the value of bulk (10.6 μΩ cm).
Original language | English |
---|---|
Pages (from-to) | 2181-2184 |
Number of pages | 4 |
Journal | Materials Letters |
Volume | 63 |
Issue number | 26 |
DOIs | |
Publication status | Published - 2009 Oct 31 |
Keywords
- Ion beam deposition
- Platinum
- Resistivity
- Substrate bias voltage
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering