Influence of substrate bias voltage on properties of Pt thin films deposited by non-mass separated ion beam deposition method

Joon Woo Bae; Jae Won Lim; Kouji Mimura; Masahito Uchikoshi; Mitsuhiro Wada; Makoto Ikeda; Minoru Isshiki

doi:10.1016/j.matlet.2009.07.015

Influence of substrate bias voltage on properties of Pt thin films deposited by non-mass separated ion beam deposition method

Joon Woo Bae, Jae Won Lim, Kouji Mimura, Masahito Uchikoshi, Mitsuhiro Wada, Makoto Ikeda, Minoru Isshiki

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Pt thin films were deposited on Si substrates by applying a negative substrate bias voltage using a non-mass separated ion beam deposition method. The effect of the substrate bias voltage on the properties of the deposited films was investigated. In the case of Pt thin films deposited without the substrate bias voltage, a columnar structure and small grains were observed. The electrical resistivity of the deposited Pt films was very high (49.3 ± 0.65 μΩ cm). By increasing the substrate bias voltage, no clear columnar structure was observed. At the substrate bias voltage of - 75 V, the resistivity of the Pt film showed a minimum value of 16.9 ± 0.2 μΩ cm closed to the value of bulk (10.6 μΩ cm).

Original language	English
Pages (from-to)	2181-2184
Number of pages	4
Journal	Materials Letters
Volume	63
Issue number	26
DOIs	https://doi.org/10.1016/j.matlet.2009.07.015
Publication status	Published - 2009 Oct 31

Keywords

Ion beam deposition
Platinum
Resistivity
Substrate bias voltage

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/j.matlet.2009.07.015

Cite this

@article{c3a6f35f0875482cb10a4f700692a900,

title = "Influence of substrate bias voltage on properties of Pt thin films deposited by non-mass separated ion beam deposition method",

abstract = "Pt thin films were deposited on Si substrates by applying a negative substrate bias voltage using a non-mass separated ion beam deposition method. The effect of the substrate bias voltage on the properties of the deposited films was investigated. In the case of Pt thin films deposited without the substrate bias voltage, a columnar structure and small grains were observed. The electrical resistivity of the deposited Pt films was very high (49.3 ± 0.65 μΩ cm). By increasing the substrate bias voltage, no clear columnar structure was observed. At the substrate bias voltage of - 75 V, the resistivity of the Pt film showed a minimum value of 16.9 ± 0.2 μΩ cm closed to the value of bulk (10.6 μΩ cm).",

keywords = "Ion beam deposition, Platinum, Resistivity, Substrate bias voltage",

author = "Bae, {Joon Woo} and Lim, {Jae Won} and Kouji Mimura and Masahito Uchikoshi and Mitsuhiro Wada and Makoto Ikeda and Minoru Isshiki",

year = "2009",

month = oct,

day = "31",

doi = "10.1016/j.matlet.2009.07.015",

language = "English",

volume = "63",

pages = "2181--2184",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier",

number = "26",

}

TY - JOUR

T1 - Influence of substrate bias voltage on properties of Pt thin films deposited by non-mass separated ion beam deposition method

AU - Bae, Joon Woo

AU - Lim, Jae Won

AU - Mimura, Kouji

AU - Uchikoshi, Masahito

AU - Wada, Mitsuhiro

AU - Ikeda, Makoto

AU - Isshiki, Minoru

PY - 2009/10/31

Y1 - 2009/10/31

N2 - Pt thin films were deposited on Si substrates by applying a negative substrate bias voltage using a non-mass separated ion beam deposition method. The effect of the substrate bias voltage on the properties of the deposited films was investigated. In the case of Pt thin films deposited without the substrate bias voltage, a columnar structure and small grains were observed. The electrical resistivity of the deposited Pt films was very high (49.3 ± 0.65 μΩ cm). By increasing the substrate bias voltage, no clear columnar structure was observed. At the substrate bias voltage of - 75 V, the resistivity of the Pt film showed a minimum value of 16.9 ± 0.2 μΩ cm closed to the value of bulk (10.6 μΩ cm).

AB - Pt thin films were deposited on Si substrates by applying a negative substrate bias voltage using a non-mass separated ion beam deposition method. The effect of the substrate bias voltage on the properties of the deposited films was investigated. In the case of Pt thin films deposited without the substrate bias voltage, a columnar structure and small grains were observed. The electrical resistivity of the deposited Pt films was very high (49.3 ± 0.65 μΩ cm). By increasing the substrate bias voltage, no clear columnar structure was observed. At the substrate bias voltage of - 75 V, the resistivity of the Pt film showed a minimum value of 16.9 ± 0.2 μΩ cm closed to the value of bulk (10.6 μΩ cm).

KW - Ion beam deposition

KW - Platinum

KW - Resistivity

KW - Substrate bias voltage

UR - http://www.scopus.com/inward/record.url?scp=68949211008&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=68949211008&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2009.07.015

DO - 10.1016/j.matlet.2009.07.015

M3 - Article

AN - SCOPUS:68949211008

VL - 63

SP - 2181

EP - 2184

JO - Materials Letters

JF - Materials Letters

SN - 0167-577X

IS - 26

ER -

Influence of substrate bias voltage on properties of Pt thin films deposited by non-mass separated ion beam deposition method

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this