Influence of substrate bias voltage on properties of Pt thin films deposited by non-mass separated ion beam deposition method

Joon Woo Bae, Jae Won Lim, Kouji Mimura, Masahito Uchikoshi, Mitsuhiro Wada, Makoto Ikeda, Minoru Isshiki

Research output: Contribution to journalArticle

Abstract

Pt thin films were deposited on Si substrates by applying a negative substrate bias voltage using a non-mass separated ion beam deposition method. The effect of the substrate bias voltage on the properties of the deposited films was investigated. In the case of Pt thin films deposited without the substrate bias voltage, a columnar structure and small grains were observed. The electrical resistivity of the deposited Pt films was very high (49.3 ± 0.65 μΩ cm). By increasing the substrate bias voltage, no clear columnar structure was observed. At the substrate bias voltage of - 75 V, the resistivity of the Pt film showed a minimum value of 16.9 ± 0.2 μΩ cm closed to the value of bulk (10.6 μΩ cm).

Original languageEnglish
Pages (from-to)2181-2184
Number of pages4
JournalMaterials Letters
Volume63
Issue number26
DOIs
Publication statusPublished - 2009 Oct 31

Keywords

  • Ion beam deposition
  • Platinum
  • Resistivity
  • Substrate bias voltage

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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