Influence of structural imperfection of Σ5 grain boundaries in bulk multicrystalline Si on their electrical activities

Kentaro Kutsukake, Noritaka Usami, Kozo Fujiwara, Yoshitaro Nose, Kazuo Nakajima

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Bulk multicrystalline Si with {310} Σ5 grain boundaries (GBs) was grown by Bridgman growth method using seed crystals with artificially controlled configuration. The structure of the GBs was preserved in the epitaxial growth region without formation of more GBs. However, the GBs were revealed to contain small-angle deviation of ∼5° from the perfect Σ5 relative crystal orientation both in tilt and twist components due to the inaccuracy of the seed crystal arrangement. Such an unintentional misalignment was utilized to investigate the relationship between electrical activity and the deviation angle of {310} Σ5 GB. Electron beam-induced current measurement clarified that carrier recombination velocity at the {310} Σ5 GBs decreases with decreasing deviation angle and shows a minimum at the perfect Σ5 relationship. This tendency suggests that {310} Σ5 GB is electrically inactive, as well as Σ3 and Σ9 GBs.

Original languageEnglish
Article number063509
JournalJournal of Applied Physics
Volume101
Issue number6
DOIs
Publication statusPublished - 2007 Apr 8

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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