Influence of sputtering parameters on the crystallinity and crystal orientation of AlN layers deposited by RF sputtering using the AlN target

Z. Vashaei, T. Aikawa, Makoto Ohtsuka, Hidekazu Kobatake, Hiroyuki Fukuyama, S. Ikeda, K. Takada

Research output: Contribution to journalArticlepeer-review

48 Citations (Scopus)

Abstract

Aluminum nitride (AlN) layers were grown on c-sapphire by radio frequency (RF) sputtering in plasma containing a mixture of argon and nitrogen gas using an AlN target. The influence of nitrogen gas fraction, RF power, and sputtering pressure on crystalline quality and growth rate as well as surface morphology were investigated. Crystalline quality improves as nitrogen gas fraction and RF power increase. The growth rate increases as the RF power increases and decreases as the sputtering pressure increases.

Original languageEnglish
Pages (from-to)459-462
Number of pages4
JournalJournal of Crystal Growth
Volume311
Issue number3
DOIs
Publication statusPublished - 2009 Jan 15

Keywords

  • A1. Crystal structure
  • A3. RF sputtering
  • B2. Aluminum nitride

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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