Influence of sputtering geometry on crystallinity of al(Llo) thin films on offset (loo)si

Shin Yokoyama, Hiroshi Ichikawa, Mitsumasa Koyanagi

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

The quality of Al(llO) deposited by means of dc magnetron sputtering on misoriented (100) Si has been examined for various incident geometries between the A1 beam and the vicinal Si surface. The ideal atomic step configuration of this substrate is similar to a stairway. Three directions of incidence (downstairs, upstairs and from the side of the stairway) were investigated. The X-ray diffraction measurements indicate that the crystallinity is improved for the upstairs grazing incidence. The results are explained in terms of the enhanced A1 surface migration due to the grazing incidence and the dominant growth at the steps on the surface.

Original languageEnglish
Pages (from-to)L283-L286
JournalJapanese journal of applied physics
Volume32
Issue number2 B
DOIs
Publication statusPublished - 1993 Feb

Keywords

  • Al(110) single crystal
  • Atomic step
  • Dc magnetron sputtering
  • Hydrogen-terminated Si
  • Sputtering geometry
  • UHV sputtering
  • Vicinal Si surface

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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