Influence of sputtering conditions on crystalline quality of AlN layers deposited by RF reactive sputtering

Tomoyuki Kumada, Makoto Ohtsuka, Kazuya Takada, Hiroyuki Fukuyama

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

Aluminum nitride (AlN) is increasingly demanded for use in semiconductor-related industries. This study was undertaken for fabrication of high-quality AlN thick layers using radio-frequency (RF) reactive sputtering with a pure Al target. The AlN layers were sputtered homoepitaxially on high-quality thin AlN layers on sapphire substrates for 1.5 h with 300 to 650 W at 573 and 773 K. The AlN thin layers were grown using sapphire nitridation before sputtering. A N2-Ar gas mixture was used as the sputtering atmosphere and N2 gas flow ratio was changed from 20 to 60 vol%N2. In all sputtering conditions c-axis oriented AlN layers were fabricated. AlN layer sputtered with 400 W under 40 to 60 vol%N2 at 773 K was grown by about 1 μm thickness. The AlN layer sputtered with 400 W under 40 and 50 vol%N2 at 573 and 773 K showed superior quality, with almost identical crystal structural quality to that of each nitrided sapphire substrate.

Original languageEnglish
Pages (from-to)1520-1523
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume8
Issue number5
DOIs
Publication statusPublished - 2011 May 1

Keywords

  • AlN
  • Crystalline quality
  • Reactive sputtering
  • Sapphire nitridation
  • Thin film
  • XRD

ASJC Scopus subject areas

  • Condensed Matter Physics

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