Influence of Sn on galvanomagnetic properties of layered p-(Bi1-xSbx)2Te3 semiconductors

V. A. Kulbachinskii, A. Yu Kaminsky, K. Kindo, Y. Narumi, K. Suga, S. Kawasaki, M. Sasaki, N. Miyajima, G. R. Wu, P. Lostak, P. Hajek

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)


The temperature dependence of the resistivity and the Hall effect in the range 0.3-300 K, and the Shubnikov-de Haas effect have been investigated in Sn-doped p-(Bi1-xSbx)2Te3 (0 ≤ x ≤ 1.0) single crystals. Doping of (Bi1-xSbx)2Te3 with tin showed that Sn exhibits acceptor properties in all crystals. The anomalous temperature and magnetic field behavior of the Hall coefficient was explained quantitatively by a model, which involves the complicated two-valence band structure of p-(Bi1-xSbx)2Te3. The quantization of the Hall resistivity ρH in the form of plateaus in the dependence of ρH on the magnetic field B is observed. The minima of the transverse magnetoresistivity ρ correspond to the start of plateaus, The oscillation of ρH is due to the presence of a carrier reservoir. An impurity resonant band with a high density of states in Sb2Te3 or the second lower valence band with a higher hole effective mass in (Bi1-xSbx)2Te3 serves as the reservoir. The valence band structure of (Bi1-xSbx)2Te3 is also discussed.

Original languageEnglish
Pages (from-to)1467-1480
Number of pages14
JournalPhysica Status Solidi (B) Basic Research
Issue number3
Publication statusPublished - 2002
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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