Influence of silicon wafer surface roughness on semiconductor device characteristics

Keiichiro Mori, Shuichi Samata, Noritomo Mitsugi, Akinobu Teramoto, Rihito Kuroda, Tomoyuki Suwa, Keiichi Hashimoto, Shigetoshi Sugawa

Research output: Contribution to journalArticle

Abstract

The surface roughness of silicon wafer is one of the most important issues that degrade characteristics of semiconductor devices. The importance of spatial roughness frequency as an influential parameter has been pointed. In this research, the effect of roughness frequency on MOSFET characteristics was studied using samples with different roughness for frequency. From the obtained results, it was found that roughness with a low spatial wavelength affects electron mobility and gate insulating film reliability such as E bd, Q bd and SILC.

Original languageEnglish
Article numberSMMB06
JournalJapanese journal of applied physics
Volume59
DOIs
Publication statusPublished - 2020 Jul 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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