Influence of silicon wafer loading ambient on chemical composition and thickness uniformity of sub-5-nm-thick oxide films

Tetsuo Endoh, Yasutaka Kimura, Markus Lenski, Fujio Masuoka

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The influence of silicon wafer loading conditions during the vertical furnace oxidation process, on both the chemical composition and thickness uniformity of sub-5-nm-thick oxide films is investigated by secondary ion mass spectrometry (SIMS) and X-ray photoelectron spectroscopy (XPS). Loading wafers in pure nitrogen prior to oxidation effectively suppresses undesired preoxide growth offering controlled oxidation in the sub-5 nm regime. However, these wafers show a pronounced thickness nonuniformity, which correlates to the nitrogen incorporated in the oxide at the central part of the wafer. Loading wafers in a 1%-O2/99%-N2 ambient prior to oxidation results in uniform oxide films. However, film thickness in the sub-5 nm regime is difficult to control due to an excessive preoxide growth during wafer loading. Loading wafers in a chemically inert Ar atmosphere or under controlled preoxidation conditions prior to oxidation results in uniform oxide films with controllable oxide thickness suitable for sub-5 nm thick oxides.

Original languageEnglish
Pages (from-to)7023-7028
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number12
DOIs
Publication statusPublished - 2001 Dec

Keywords

  • Nitridation
  • SIMS
  • Sub-5-nm oxide
  • Thickness uniformity
  • Wafer loading ambient
  • XPS

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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