Influence of silicon on the growth of barrier-type anodic films on titanium

M. Tauseef Tanvir, K. Fushimi, K. Shimizu, S. Nagata, P. Skeldon, G. E. Thompson, H. Habazaki

Research output: Contribution to journalArticlepeer-review

31 Citations (Scopus)


Amorphous anodic titania, stabilised by incorporation of silicon species, is shown to grow to high voltages on sputter-deposited, single-phase Ti-Si alloys during anodizing at a constant current density in ammonium pentaborate electrolyte. The films comprise two main layers, with silicon species confined to the inner layers. An amorphous-to-crystalline transition occurs at ∼60 V on the Ti-6 at.% Si alloy, while the transition is suppressed to voltages above 140 V on alloys with 12 and 26 at.% silicon. The crystalline oxide, nucleated at a depth of ∼40% of the film thickness, is associated with the presence of a precursor of crystalline oxide in the pre-existing air-formed oxide. The modified structure of the air-formed oxide due to increased incorporation of silicon species suppresses the amorphous-to-crystalline transition until the onset of dielectric breakdown. The transport numbers of cations and anions during growth of the anodic oxides are independent of the concentration of silicon species in the inner layer, despite the marked change in the field strength.

Original languageEnglish
Pages (from-to)6834-6840
Number of pages7
JournalElectrochimica Acta
Issue number24
Publication statusPublished - 2007 Aug 1


  • Amorphous-to-crystalline transition
  • Anodic oxide
  • Anodic titania
  • Ionic transport

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Electrochemistry


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