We have fabricated Si/β-FeSi2 particles/Si structures by reactive deposition epitaxy for β-FeSi2 and molecular-beam epitaxy (MBE) for Si. It was found that the photoluminescence (PL) intensity of β-FeSi2 strongly depended on MBE-Si growth temperature for embedding β-FeSi2 in Si. Room temperature 1.6 μm electroluminescence was realized from a Si-based light-emitting diode by embedding the β-FeSi2 active region with Si grown at 500 °C. Observation with transmission electron microscopy revealed that the a axis of β-FeSi2 from which PL was observed was about 9% longer than that of β-FeSi2 without PL or of bulk β-FeSi2.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)