Influence of Si film thickness on growth enhancement in Si lateral solid phase epitaxy

Masahiro Moniwa, Kikuo Kusukawa, Eiichi Murakami, Terunori Warabisako, Masanobu Miyao

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    19 Citations (Scopus)

    Abstract

    Lateral solid phase epitaxial growth (L-SPE) of Si on SiO2 film was investigated as a function of deposited amorphous Si (a-Si) film thickness. Both the L-SPE rate and the annealing time necessary for {111} facet formation increased with film thickness. As a result, a large L-SPE length (9 μm) under {110} facet growth was obtained for a 1.6-μm-thick film sample. Above the critical film thickness (>2 μm), crack formation in a-Si films was observed during deposition. This indicates that intrinsic stresses play an important role in this growth enhancement.

    Original languageEnglish
    Pages (from-to)1788-1790
    Number of pages3
    JournalApplied Physics Letters
    Volume52
    Issue number21
    DOIs
    Publication statusPublished - 1988 Dec 1

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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    Moniwa, M., Kusukawa, K., Murakami, E., Warabisako, T., & Miyao, M. (1988). Influence of Si film thickness on growth enhancement in Si lateral solid phase epitaxy. Applied Physics Letters, 52(21), 1788-1790. https://doi.org/10.1063/1.99626