Influence of seed/crystal interface shape on dislocation generation in Czochralski Si crystal growth

Toshinori Taishi, Yutaka Ohno, Ichiro Yonenaga, Keigo Hoshikawa

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Influence of interface shape between a seed and the grown crystal on dislocation generation behavior near the interface in Czochralski-grown Si crystal was investigated using heavily B-doped or heavily B and Ge codoped Si seeds. When the interface shape was convex toward the melt dislocations were generated near the interface, while dislocation generation was suppressed when the shape was planar. The seed with the convex interface sustains larger shear stress than that with the planar interface, and in the case dislocations are generated by thermal stress related to the interface shape at the edge of the interface.

Original languageEnglish
Pages (from-to)560-563
Number of pages4
JournalPhysica B: Condensed Matter
Volume401-402
DOIs
Publication statusPublished - 2007 Dec 15

Keywords

  • Dislocation
  • Heavy doping
  • Interface between seed and crystal
  • Silicon crystal

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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