Influence of secondary electron detection efficiency on controllability of dopant ion number in single ion implantation

Takahiro Shinada, Atsuki Ishikawa, Makoto Fujita, Keisuke Yamashita, Iwao Ohdomari

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

The single ion implantation (SII) technique has been developed for the purpose of suppressing the fluctuation of the dopant ion number in semiconductor fine structures. It is based on a focused ion beam with a chopping electrode for the extraction of single ions, which enables implanting of dopant atoms one by one into a target. The influence of secondary electron detection efficiency, which is the key technology in SII, on the controllability of ion number has been investigated in this study. The measured sheet electron concentration coincides well with that estimated by taking the detection efficiency into account.

Original languageEnglish
Pages (from-to)3419-3421
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number6 A
Publication statusPublished - 1999 Jun 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Influence of secondary electron detection efficiency on controllability of dopant ion number in single ion implantation'. Together they form a unique fingerprint.

  • Cite this