Influence of rf sputter power on ZnO film characteristics for transparent memristor devices

Firman Mangasa Simanjuntak, Takeo Ohno, Seiji Samukawa

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

The impact of the radio-frequency (rf) sputtering power on the switching characteristics of ZnO-based transparent memristor devices has been investigated. Memristor devices made with a high rf power exhibited excellent switching characteristics; meanwhile, decreasing the rf power led to less-apparent switching behavior and increased likelihood of device breakdown. However, high rf power memristors exhibited a reduced switching uniformity as the rf power significantly affected the defect concentration as well as the microstructure of the deposited ZnO films, which determine the switching characteristics and performance of memristor devices.

Original languageEnglish
Article number105216
JournalAIP Advances
Volume9
Issue number10
DOIs
Publication statusPublished - 2019 Oct 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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