Influence of randomness on the Mott transition in κ-(BEDT-TTF)2X

T. Sasaki, K. Sano, H. Sugawara, N. Yoneyama, N. Kobayashi

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

We present a detailed transport study in the organic superconductor κ-(BEDT-TTF)2Cu[N(CN)2]Br that is irradiated by X-rays. Weak molecular disorder introduced by X-ray irradiation induces the Anderson-type localization insulating state from the strongly correlated metallic/superconducting state. The hydrostatic pressure to the localization insulator restores the metallic properties. These observations indicate that the stronger electron correlations upon approaching the Mott transition enhance Anderson-type electron localization due to disorder introduced by X-ray irradiation. In the metallic state with weak disorder or under pressure, the resistivity shows a T2 dependence, which suggests that the dominant electron scattering comes from the electron-electron correlations of a Fermi-liquid metal. The coefficient A of the T2 term, however, seems not to follow the Fermi-liquid theory fully as the origin of the T2 dependence in a case of the disorder effect. Further studies of the competition and/or cooperation of the Mott and Anderson transitions close to the Mott critical point are important for understanding the critical behavior of the electrons in real materials.

Original languageEnglish
Pages (from-to)947-952
Number of pages6
JournalPhysica Status Solidi (B) Basic Research
Volume249
Issue number5
DOIs
Publication statusPublished - 2012 May

Keywords

  • Anderson insulator
  • Mott transition
  • Randomness
  • X-ray irradiation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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