Abstract
Cu2ZnSnS4 thin films were fabricated through sulfurization of sputtered precursors. Precursors with different chemical compositions were prepared to investigate the influence of precursor's composition on the properties of CZTS thin films. It has been revealed that CZTS thin films with good crystallinity can be obtained for all the precursors. Especially for the Zn-rich films (the atomic ratio of Zn/Sn exceed 1.2), CZTS grains with the size of over 2 μm can be observed across the cross section of the films. Yet minor binary phases coexist with CZTS in the sulfurized films. In Sn-rich films binary SnS tends to exist and in Zn-rich films SnS and Cu7S4 coexists. Finally the binary SnS can be removed in Sn-rich films using a HCl etching method and films composed of single phase kesterite CZTS can be ultimately obtained.
| Original language | English |
|---|---|
| Pages (from-to) | 2200-2204 |
| Number of pages | 5 |
| Journal | Taiyangneng Xuebao/Acta Energiae Solaris Sinica |
| Volume | 34 |
| Issue number | 12 |
| Publication status | Published - 2013 Dec |
Keywords
- CuZnSnS
- Precursors
- Sulfurization
- Thin films
ASJC Scopus subject areas
- Renewable Energy, Sustainability and the Environment
- Energy Engineering and Power Technology
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
