Influence of power semiconductor on-voltage on iron loss of inverter-fed

Daisuke Kyamoari, Keisuke Fujisaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

The influence of power semiconductor on-voltage on iron loss of inverter-fed electrical steels is made clear through the experimental data. One-phase full bridge inverter is used for an iron loss evaluation, where Bipolar transistor, MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) and IGBT (Insulated Gate Bipolar Transistor) are selected as power semiconductors in an inverter circuit. When maximum magnetic flux density is adjusted to be 1 [T] in the electrical steel, the measured iron loss is different from the three kinds of power semiconductors.

Original languageEnglish
Title of host publication2013 IEEE 10th International Conference on Power Electronics and Drive Systems, PEDS 2013
Pages840-845
Number of pages6
DOIs
Publication statusPublished - 2013 Aug 1
Event2013 IEEE 10th International Conference on Power Electronics and Drive Systems, PEDS 2013 - Kitakyushu, Japan
Duration: 2013 Apr 222013 Apr 25

Publication series

NameProceedings of the International Conference on Power Electronics and Drive Systems

Other

Other2013 IEEE 10th International Conference on Power Electronics and Drive Systems, PEDS 2013
CountryJapan
CityKitakyushu
Period13/4/2213/4/25

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Influence of power semiconductor on-voltage on iron loss of inverter-fed'. Together they form a unique fingerprint.

Cite this