TY - GEN
T1 - Influence of power semiconductor on-voltage on iron loss of inverter-fed
AU - Kyamoari, Daisuke
AU - Fujisaki, Keisuke
PY - 2013/8/1
Y1 - 2013/8/1
N2 - The influence of power semiconductor on-voltage on iron loss of inverter-fed electrical steels is made clear through the experimental data. One-phase full bridge inverter is used for an iron loss evaluation, where Bipolar transistor, MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) and IGBT (Insulated Gate Bipolar Transistor) are selected as power semiconductors in an inverter circuit. When maximum magnetic flux density is adjusted to be 1 [T] in the electrical steel, the measured iron loss is different from the three kinds of power semiconductors.
AB - The influence of power semiconductor on-voltage on iron loss of inverter-fed electrical steels is made clear through the experimental data. One-phase full bridge inverter is used for an iron loss evaluation, where Bipolar transistor, MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) and IGBT (Insulated Gate Bipolar Transistor) are selected as power semiconductors in an inverter circuit. When maximum magnetic flux density is adjusted to be 1 [T] in the electrical steel, the measured iron loss is different from the three kinds of power semiconductors.
UR - http://www.scopus.com/inward/record.url?scp=84880712648&partnerID=8YFLogxK
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U2 - 10.1109/PEDS.2013.6527134
DO - 10.1109/PEDS.2013.6527134
M3 - Conference contribution
AN - SCOPUS:84880712648
SN - 9781467317900
T3 - Proceedings of the International Conference on Power Electronics and Drive Systems
SP - 840
EP - 845
BT - 2013 IEEE 10th International Conference on Power Electronics and Drive Systems, PEDS 2013
T2 - 2013 IEEE 10th International Conference on Power Electronics and Drive Systems, PEDS 2013
Y2 - 22 April 2013 through 25 April 2013
ER -