Influence of oxygen precipitation along dislocations on the strength of silicon crystals

Ichiro Yonenaga, Koji Sumino

Research output: Contribution to journalArticlepeer-review

61 Citations (Scopus)

Abstract

The mechanical strength of dislocated crystals of Czochralski-grown silicon as influenced by the precipitation of oxygen impurities on dislocations was investigated. The yield strength increases during the early stage of precipitation of silicon oxide, but decreases remarkably during the later stage of precipitation. The enhancement of the yield strength is brought about by the immobilization of dislocations due to locking by closely aligned precipitates along the dislocations during the early stage of precipitation. The locking effect diminishes during the late stage when precipitates on dislocations coalesce with the generation of free portions of dislocations with large separation.

Original languageEnglish
Pages (from-to)734-738
Number of pages5
JournalJournal of Applied Physics
Volume80
Issue number2
DOIs
Publication statusPublished - 1996 Jul 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Influence of oxygen precipitation along dislocations on the strength of silicon crystals'. Together they form a unique fingerprint.

Cite this