TY - JOUR
T1 - Influence of oxygen concentration of Si wafer surface in Si emission on nano ordered three-dimensional structure devices
AU - Fukuda, Etsuo
AU - Endoh, Tetsuo
AU - Ishikawa, Takashi
AU - Izunome, Koji
AU - Kamijo, Kazutaka
AU - Miyashita, Moriya
AU - Sakamoto, Takao
AU - Kageshima, Hiroyuki
N1 - Funding Information:
In STEM analysis, we would like to thank you Professor Konno and Professor Nishijima Metal Materials Research Institute Tohoku University for taking care of us. This work was supported by ACCEL project, “Three-Dimensional Integrated Circuits Technology Based on Vertical BC-MOSFETs and Its Advanced Application Exploration (PL: Tetsuo Endoh, PM: Toru Masaoka)” under Japan Science and Technology Agency.
Publisher Copyright:
© 2017 The Surface Science Society of Japan.
PY - 2017/12/14
Y1 - 2017/12/14
N2 - In past studies, the Si emission phenomenon is one of the issues for fabrication of 3D structure devices such as FinFETs and Vertical MOSFETs. In this paper, it is found that novel Si emission phenomena depending on the surface oxygen concentration of Si wafer occur, when Si pillars patterned less than 100 nm are oxidized. A wafer with high oxygen concentration which is over 1:0×1018 atoms/cm3 can suppress Si emission from the Si pillar compared to the low oxygen concentration wafers which are less than 1:0×1017 atoms/cm3. The difference of oxygen concentration in the Si substrate is expected to largely depend on the behavior of oxygen atom in the Si wafer before and after oxidation. In case of an oxygen concentration ratio exceeding the solid solubility of Si, oxygen diffuses outward from the Si substrate after oxidation, whereas oxygen diffuses inward when the concentration is below the solid solubility. It was also found that the larger the degree of injection of oxygen into the Si substrate after oxidation, the larger the emission amount of Si from the Si pillar. Finally, we discuss the mechanism of above experimental Si emission phenomena in nanoscale Si pillar with previous first principle model of silicon oxidation process.
AB - In past studies, the Si emission phenomenon is one of the issues for fabrication of 3D structure devices such as FinFETs and Vertical MOSFETs. In this paper, it is found that novel Si emission phenomena depending on the surface oxygen concentration of Si wafer occur, when Si pillars patterned less than 100 nm are oxidized. A wafer with high oxygen concentration which is over 1:0×1018 atoms/cm3 can suppress Si emission from the Si pillar compared to the low oxygen concentration wafers which are less than 1:0×1017 atoms/cm3. The difference of oxygen concentration in the Si substrate is expected to largely depend on the behavior of oxygen atom in the Si wafer before and after oxidation. In case of an oxygen concentration ratio exceeding the solid solubility of Si, oxygen diffuses outward from the Si substrate after oxidation, whereas oxygen diffuses inward when the concentration is below the solid solubility. It was also found that the larger the degree of injection of oxygen into the Si substrate after oxidation, the larger the emission amount of Si from the Si pillar. Finally, we discuss the mechanism of above experimental Si emission phenomena in nanoscale Si pillar with previous first principle model of silicon oxidation process.
KW - Oxidation
KW - Oxygen
KW - Semiconductor-insulator interfaces
KW - Si(100)
KW - Silicon oxides
KW - Single crystal surfaces
KW - Surface roughness
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U2 - 10.1380/ejssnt.2017.127
DO - 10.1380/ejssnt.2017.127
M3 - Article
AN - SCOPUS:85040581214
VL - 15
SP - 127
EP - 134
JO - e-Journal of Surface Science and Nanotechnology
JF - e-Journal of Surface Science and Nanotechnology
SN - 1348-0391
ER -