Influence of oxygen composition and carbon impurity on electronic reliability of HfO2

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

The effect of point defects such as oxygen vacancy and carbon interstitial on both electronic and structural characteristics of hamium dioxide was analyzed by a quantum chemical molecular dynamics method. When a carbon atom as the impurity is introduced in hafnium dioxide, carbon impurity states (donor and acceptor) are formed in the band gap of hafnium dioxide. The band gap calculated from the energy difference between the donor and acceptor decreases to 1.6 eV. We conclude therefore, it is very important to control the composition of HfO2 films in order to assure the electronic performance and reliability of hafnium dioxide film.

Original languageEnglish
Title of host publication2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007
PublisherSpringer-Verlag Wien
Pages165-168
Number of pages4
ISBN (Print)9783211728604
DOIs
Publication statusPublished - 2007
Event12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007 - Vienna, Austria
Duration: 2007 Sep 252007 Sep 27

Publication series

Name2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007

Other

Other12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007
CountryAustria
CityVienna
Period07/9/2507/9/27

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Modelling and Simulation

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