TY - JOUR
T1 - Influence of oxide semiconductor thickness on thin-film transistor characteristics
AU - Nakata, Mitsuru
AU - Tsuji, Hiroshi
AU - Sato, Hiroto
AU - Nakajima, Yoshiki
AU - Fujisaki, Yoshihide
AU - Takei, Tatsuya
AU - Yamamoto, Toshihiro
AU - Fujikake, Hideo
N1 - Copyright:
Copyright 2013 Elsevier B.V., All rights reserved.
PY - 2013/3
Y1 - 2013/3
N2 - We discuss here the influence of oxide semiconductor thickness on thin-film transistor (TFT) characteristics. We have determined this influence by measuring the transfer characteristics of amorphous InGaZnO (IGZO) TFTs having various IGZO thicknesses and using a simple method to calculate the depletion width in IGZO films. ON current was nearly constant with respect to IGZO thickness because it depended on a high electron density in an accumulation region sufficiently thinner than the IGZO film. The threshold voltage shifted negatively with increasing IGZO thickness, which indicates that a thicker IGZO film requires a higher negative gate voltage for it to be fully depleted. Calculation results suggest that threshold voltage variation due to IGZO thickness variation increases with increasing donor density and IGZO thickness.
AB - We discuss here the influence of oxide semiconductor thickness on thin-film transistor (TFT) characteristics. We have determined this influence by measuring the transfer characteristics of amorphous InGaZnO (IGZO) TFTs having various IGZO thicknesses and using a simple method to calculate the depletion width in IGZO films. ON current was nearly constant with respect to IGZO thickness because it depended on a high electron density in an accumulation region sufficiently thinner than the IGZO film. The threshold voltage shifted negatively with increasing IGZO thickness, which indicates that a thicker IGZO film requires a higher negative gate voltage for it to be fully depleted. Calculation results suggest that threshold voltage variation due to IGZO thickness variation increases with increasing donor density and IGZO thickness.
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U2 - 10.7567/JJAP.52.03BB04
DO - 10.7567/JJAP.52.03BB04
M3 - Article
AN - SCOPUS:84877269648
VL - 52
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 3 PART 2
M1 - 03BB04
ER -