Influence of oxide semiconductor thickness on TFT characteristics

Mitsuru Nakata, Hiroshi Tsuji, Hiroto Sato, Yoshiki Nakajima, Yoshihide Fujisaki, Tatsuya Takei, Toshihiro Yamamoto, Hideo Fujikake

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

We discuss the influence of oxide semiconductor thickness on thin-film transistor (TFT) characteristics by measuring transfer characteristics of amorphous InGaZnO (IGZO) TFTs with various IGZO thicknesses and using a simple calculation of depletion width in a semiconductor film. The ON current was nearly constant with respect to IGZO thickness because its value depended on high-density electrons in an accumulation region sufficiently thinner than IGZO thickness. The threshold voltage shifted negatively with increasing IGZO thickness, which indicates that a thicker IGZO film requires a higher negative gate voltage for it to be fully depleted. Calculation results suggest that the threshold voltage variation due to oxide semiconductor thickness variation increases with increasing donor density and oxide semiconductor thickness.

Original languageEnglish
Title of host publicationProceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
Pages43-44
Number of pages2
Publication statusPublished - 2012 Oct 31
Externally publishedYes
Event19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012 - Kyoto, Japan
Duration: 2012 Jul 42012 Jul 6

Publication series

NameProceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012

Other

Other19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
CountryJapan
CityKyoto
Period12/7/412/7/6

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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  • Cite this

    Nakata, M., Tsuji, H., Sato, H., Nakajima, Y., Fujisaki, Y., Takei, T., Yamamoto, T., & Fujikake, H. (2012). Influence of oxide semiconductor thickness on TFT characteristics. In Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012 (pp. 43-44). [6294831] (Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012).