Influence of non-uniform interface defect clustering on field-effect mobility in sic mosfets investigated by local deep level transient spectroscopy and device simulation

Kohei Yamasue, Yuji Yamagishi, Yasuo Cho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

It has recently been shown that interface defect density (Dit) at SiO2/SiC interfaces can have non-uniform clustered distribution through the measurement by local deep level transient spectroscopy (local DLTS). Here we investigate the influence of the non-uniform Dit clustering on the field-effect mobility in SiC metal-oxide-semiconductor field effect transistors (MOSFETs) by device simulation. We develop a three dimensional numerical model of a SiC MOSFET, which can incorporate actual Dit distributions measured by local DLTS. Our main result is that the impact of the non-uniform Dit clustering on field-effect mobility is negligible for a SiC MOSFET with high Dit formed by dry thermal oxidation but it becomes significant for that with lower Dit by post-oxidation annealing. The result indicates that channel mobility can be further improved by making Dit distribution uniform as well as reducing Dit.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2019
EditorsHiroshi Yano, Takeshi Ohshima, Kazuma Eto, Takeshi Mitani, Shinsuke Harada, Yasunori Tanaka
PublisherTrans Tech Publications Ltd
Pages627-634
Number of pages8
ISBN (Print)9783035715798
DOIs
Publication statusPublished - 2020
Event18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019 - Kyoto, Japan
Duration: 2019 Sep 292019 Oct 4

Publication series

NameMaterials Science Forum
Volume1004 MSF
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

Conference18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019
CountryJapan
CityKyoto
Period19/9/2919/10/4

Keywords

  • Channel mobility
  • Device simulation
  • Field-effect mobility
  • Interface defects
  • Local deep level transient spectroscopy
  • Scanning nonlinear dielectric microscopy
  • SiC-MOSFET

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Influence of non-uniform interface defect clustering on field-effect mobility in sic mosfets investigated by local deep level transient spectroscopy and device simulation'. Together they form a unique fingerprint.

Cite this