Influence of NiSi on parasitic resistance fluctuation of FinFETs

T. Matsukawa, Y. X. Liu, Kazuhiko Endo, J. Tsukada, Y. Ishikawa, H. Yamauchi, S. O'Uchi, K. Sakamoto, M. Masahara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Influence of NiSi S/D incorporation on parasitic resistance (R para) fluctuation of FinFETs was investigated in detail. While the NiSi S/D enhances the on current of the FinFET thanks to the Rpara reduction, it also causes additional Rpara fluctuation. Through analysis of correlation of Rpara with fin thickness and gate-to-NiSi offset fluctuation, it is revealed that NiSi/n-Si contact resistance component could cause the Rpara fluctuation.

Original languageEnglish
Title of host publicationProceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
Pages118-119
Number of pages2
DOIs
Publication statusPublished - 2011 Jul 11
Externally publishedYes
Event2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 - Hsinchu, Taiwan, Province of China
Duration: 2011 Apr 252011 Apr 27

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings

Other

Other2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
CountryTaiwan, Province of China
CityHsinchu
Period11/4/2511/4/27

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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