Influence of negative substrate bias voltage on the impurity concentrations in Zr films

J. W. Lim, J. W. Bae, K. Mimura, M. Isshiki

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Zr films were deposited on Si(1 0 0) substrates without a substrate bias voltage and with substrate bias voltages of -50 V and -100 V using a non-mass separated ion beam deposition system. Secondary ion mass spectrometry and glow discharge mass spectrometry were used to determine the impurity concentrations in a Zr target and Zr films. It was found that the total amount of impurities in the Zr film deposited at the substrate bias voltage of -50 V was much lower than that in the Zr film deposited without the substrate bias voltage. It means that applying a negative bias voltage to the substrate can suppress the increase in impurities of Zr films. Furthermore, it was confirmed that dominant impurity elements such as C, N and O have a considerable effect on the purity of Zr films and these impurities can be remarkably reduced by applying the negative substrate bias voltage.

Original languageEnglish
Pages (from-to)301-306
Number of pages6
JournalMaterials Chemistry and Physics
Volume96
Issue number2-3
DOIs
Publication statusPublished - 2006 Apr 10

Keywords

  • Impurity
  • Ion beam
  • Mass spectrometry
  • Refining effect
  • Substrate bias voltage
  • Zirconium

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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