Influence of moisture on the CVD formation of a MnOx barrier layer

K. Neishi, K. Matsumoto, H. Sato, H. Itoh, S. Hosaka, Junichi Koike

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We investigated the effects of moisture on the deposition behavior of the MnOx diffusion barrier layer on TEOS-oxide substrates. The moisture effects were investigated in two ways: (1) with and without the introduction of H2O gas in the reaction chamber and (2) with and without pre-annealing of the TEOS-oxide substrates without introducing H2O gas. A thick crystalline MnOx layer was formed under the presence of H2O gas. A thin amorphous MnOx layer was formed without H2O gas. Without H2O gas in the reaction chamber, the thickness of the MnOx layer was slightly thinner on the substrate with pre-annealing than on the substrate without annealing.

Original languageEnglish
Title of host publicationAdvanced Metallization Conference 2008, AMC 2008
Pages307-311
Number of pages5
Publication statusPublished - 2009 Oct 19
EventAdvanced Metallization Conference 2008, AMC 2008 - San Diego, CA, United States
Duration: 2008 Sep 232008 Sep 25

Publication series

NameAdvanced Metallization Conference (AMC)
ISSN (Print)1540-1766

Other

OtherAdvanced Metallization Conference 2008, AMC 2008
CountryUnited States
CitySan Diego, CA
Period08/9/2308/9/25

ASJC Scopus subject areas

  • Materials Science(all)
  • Industrial and Manufacturing Engineering

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    Neishi, K., Matsumoto, K., Sato, H., Itoh, H., Hosaka, S., & Koike, J. (2009). Influence of moisture on the CVD formation of a MnOx barrier layer. In Advanced Metallization Conference 2008, AMC 2008 (pp. 307-311). (Advanced Metallization Conference (AMC)).