Influence of local thermal dissipation on electromigration in an Al thin-film line

Yuan Li, Hsin Tzu Lee, Masumi Saka

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

To improve the reliability of Al thin-film lines in integrated circuits, the influence of local thermal dissipation on electromigration (EM) was investigated. By performing current stressing experiments on Al thin-film lines with a special design, the unique distribution of hillocks/voids around four representative zones was found. The underlying mechanism was explained by investigating the corresponding atomic flux divergence according to finite element analyses. Such unique distribution of hillocks/voids, differing from the general EM phenomenon with hillocks at anode and voids at cathode, indicates the influence of local thermal dissipation induced by the voltage-measuring pads. Moreover, by changing the position of the voltage-measuring pads in the Al thin-film line, it was found that when the position of local thermal dissipation is farther from the center of the line, the EM resistance is higher. This finding provides a valuable insight for improving the EM resistance of Al thin-film lines and therefore enhancing the reliability of the corresponding devices.

Original languageEnglish
Pages (from-to)178-183
Number of pages6
JournalMicroelectronics Reliability
Volume65
DOIs
Publication statusPublished - 2016 Oct 1

Keywords

  • Al thin-film line
  • Atomic flux divergence
  • Current stressing
  • Electromigration
  • Local thermal dissipation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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