Effective permeability, ueff, uniaxial anisotropy field, Hk, and local anisotropy fluctuation represented as magnetic ripple, SA -5/8, were systematically clarified as a function of Composition and film thickness for the le-Si-Al ternary alloy films. Influence of Hk and SA -5/8 on ueff was discussed in connection with the film structure. The magnitude of ueff was found to be strongly dependent on the magnitude of microscopical local anisotropy fluctuation. The decrease of the film thickness causes a remarkable increment in SA -5/8 due to the change of the preferred grain orientation from (110) to (110)+(100) texture. To realize excellent high ueff for Fe-Si-Al films in high frequency region, it is concluded that the homogeneous preferred grain orientation in the films is important.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering