Influence of laser power on atom probe tomographic analysis of boron distribution in silicon

Y. Tu, H. Takamizawa, B. Han, Yasuo Shimizu, K. Inoue, T. Toyama, F. Yano, A. Nishida, Y. Nagai

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)


The relationship between the laser power and the three-dimensional distribution of boron (B) in silicon (Si) measured by laser-assisted atom probe tomography (APT) is investigated. The ultraviolet laser employed in this study has a fixed wavelength of 355 nm. The measured distributions are almost uniform and homogeneous when using low laser power, while clear B accumulation at the low-index pole of single-crystalline Si and segregation along the grain boundaries in polycrystalline Si are observed when using high laser power (100 pJ). These effects are thought to be caused by the surface migration of atoms, which is promoted by high laser power. Therefore, for ensuring a high-fidelity APT measurement of the B distribution in Si, high laser power is not recommended.

Original languageEnglish
Pages (from-to)58-63
Number of pages6
Publication statusPublished - 2017 Feb 1


  • Atom probe tomography
  • Dopant distribution
  • Laser power
  • Surface migration

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Instrumentation


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