Influence of isoelectronic te doping on the physical properties of ZnO films grown by molecular-beam epitaxy

Seung Hwan Park, Tsutomu Minegishi, Dong Cheol Oh, Dong Jin Kim, Ji Ho Chang, Takafumi Yao, Toshinori Taishi, Ichiro Yonenaga

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Abstract

In molecular-beam epitaxy, isoelectronic Te doping induces the serious change of the physical properties of ZnO films: i) Incorporated Te concentration is proportional to the 2.2th power of injected Te flux in the logarithmic scale; ii) Te-doped ZnO lattices are dominated by the relaxation mechanism of compressive strain; iii) incorporated Te atoms substitute to the O sites of ZnO lattices; iv) the low-level injection of Te atoms below ̃1019 cm-3 improves the crystalline quality in the ZnO films; and v) isoelectronic Te centers act as donor impurities, resulting in the increase of electrons in the ZnO films.

Original languageEnglish
Article number055501
JournalJapanese journal of applied physics
Volume52
Issue number5 PART 1
DOIs
Publication statusPublished - 2013 May 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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    Park, S. H., Minegishi, T., Oh, D. C., Kim, D. J., Chang, J. H., Yao, T., Taishi, T., & Yonenaga, I. (2013). Influence of isoelectronic te doping on the physical properties of ZnO films grown by molecular-beam epitaxy. Japanese journal of applied physics, 52(5 PART 1), [055501]. https://doi.org/10.7567/JJAP.52.055501