Influence of Internal Electric Field on the Recombination Dynamics of Localized Excitons in an InGaN Double-Quantum-Well Laser Diode Wafer Operated at 450 nm

Takeyoshi Onuma, Shigefusa F. Chichibu, Toyomi Aoyama, Kiyomi Nakajima, Parhat Ahmet, Takashi Azuhata, Toyohiro Chikyow, Takayuki Sota, Shin Ichi Nagahama, Takashi Mukai

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